2N6040_07 Datasheet, PDF (1/6 Pages) ON Semiconductor – Plastic Medium-Power Complementary Silicon Transistors

PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
2N6043 and 2N6045 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium-power complementary silicon transistors are
designed for general-purpose amplifier and low-speed switching
applications.
Features
•ăHigh DC Current Gain - h_FE = 2500 (Typ) @ I_C = 4.0 Adc
•ăCollector-Emitter Sustaining Voltage - @ 100 mAdc -
V_CEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
= 100 Vdc (Min) - 2N6042, 2N6045
•ăLow Collector-Emitter Saturation Voltage -
V_CE(sat) = 2.0 Vdc (Max) @ I_C = 4.0 Adc - 2N6043,44
= 2.0 Vdc (Max) @ I_C = 3.0 Adc - 2N6042, 2N6045
•ăMonolithic Construction with Built-In Base-Emitter Shunt Resistors
•ăEpoxy Meets UL 94 V-0 @ 0.125 in
•ăESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
•ăPb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (Note 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Emitter Voltage
2N6040
2N6043
2N6042
2N6045
V_CEO
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector-Base Voltage}
2N6040 V_CB
2N6043
2N6042
2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter-Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
V_EB
Continuous
I_C
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
P_D
Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg
Value
Unit
60
Vdc
100
60
Vdc
100
5.0
8.0
16
120
75
0.60
–ā65 to
+ā150
Vdc
Adc
mAdc
W
W/°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
http://onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60ā - 100 VOLTS, 75 WATTS
TO-220AB
CASE 221A-09
STYLE 1
MARKING DIAGRAM
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 8
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6040/D