2N5882 Datasheet, PDF (1/8 Pages) ON Semiconductor – Silicon NPN High-Power Transistor

ON Semiconductort
Silicon NPN High-Power
Transistor
. . . designed for general–purpose power amplifier and switching
applications.
• Collector–Emitter Sustaining Voltage —
V_CEO(sus) = 80 Vdc (Min)
• DC Current Gain —
h_FE = 20 (Min) @ I_C = 6.0 Adc
• Low Collector — Emitter Saturation Voltage —
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 7.0 Adc
• High Current — Gain–Bandwidth Product —
f_T = 4.0 MHz (Min) @ I_C = 1.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Derate above 25_C}
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J, T_stg
Symbol
θ_JC
Max
80
80
5.0
15
30
5.0
160
0.915
–65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max
Unit
1.1
_C/W
(1) Indicates JEDEC registered data. Units and conditions differ on some parameters and
re–registration reflecting these changes has been requested. All above values meet or
exceed present JEDEC registered data.
160
2N5882
ON Semiconductor Preferred Device
15 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
160 WATTS
CASE 1–07
TO–204AA
(TO–3)
140
120
100
80
60
40
20
0
0 25
50 75 100 125 150 175 200
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
2N5882/D