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2N5684_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – High−Current Complementary Silicon Power Transistors | |||
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ON Semiconductort
HighâCurrent Complementary
Silicon Power Transistors
. . . designed for use in highâpower amplifier and switching circuit
applications.
⢠High Current Capability â
IC Continuous = 50 Amperes.
⢠DC Current Gain â
hFE = 15â60 @ IC = 25 Adc
⢠Low CollectorâEmitter Saturation Voltage â
VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
w These devices are available in Pbâfree package(s). Specifications herein
apply to both standard and Pbâfree devices. Please see our website at
www.onsemi.com for specific Pbâfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS (1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
Symbol
2N5684
2N5686
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCB
VEB
IC
IB
PD
80
80
5.0
50
15
300
1.715
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
TJ, Tstg
â65 to + 200
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS (1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
Symbol
θJC
Max
0.584
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
300
PNP
2N5684
NPN
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 â80 VOLTS
300 WATTS
CASE 197Aâ05
TOâ204AE
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 â Rev. 11
Publication Order Number:
2N5684/D
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