2N5684 Datasheet, PDF (1/8 Pages) ON Semiconductor – High-Current Complementary Silicon Power Transistors

ON Semiconductort
High-Current Complementary
Silicon Power Transistors
. . . designed for use in high–power amplifier and switching circuit
applications.
• High Current Capability –
I_C Continuous = 50 Amperes.
• DC Current Gain –
h_FE = 15–60 @ I_C = 25 Adc
• Low Collector–Emitter Saturation Voltage –
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 25 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current – Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(1) Indicates JEDEC Registered Data.}
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J, T_stg
Symbol
θ_JC
2N5684
2N5686
80
80
5.0
50
15
300
1.715
–65 to +200
Max
0.584
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
PNP
2N5684
NPN
2N5686
50 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80 VOLTS
300 WATTS
CASE 197A–05
TO–204AE
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 10
Publication Order Number:
2N5684/D