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2N5655G_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – Plastic NPN Silicon High-Voltage Power Transistors | |||
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2N5655G, 2N5657G
Plastic NPN Silicon
High-Voltage Power
Transistors
These devices are designed for use in lineâoperated equipment such
as audio output amplifiers; lowâcurrent, highâvoltage converters; and
AC line relays.
Features
⢠Excellent DC Current Gain
⢠High CurrentâGain â Bandwidth Product
⢠These Devices are PbâFree and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
2N5655G
2N5657G
VCEO
Vdc
250
350
CollectorâBase Voltage
2N5655G
2N5657G
VCB
Vdc
275
375
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEB
6.0
Vdc
IC
0.5
Adc
ICM
1.0
Adc
IB
1.0
Adc
PD
20
W
0.16
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg â 65 to + 150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC registered data.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Thermal Resistance, JunctionâtoâCase RqJC
6.25
Unit
°C/W
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 â Rev. 12
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250â350 VOLTS, 20 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TOâ225
CASE 77â09
STYLE 1
MARKING DIAGRAM
YWW
2
N565xG
Y
WW
2N565x
G
= Year
= Work Week
= Device Code
x = 5 or 7
= PbâFree Package
ORDERING INFORMATION
Device
Package
Shipping
2N5655G
TOâ225
(PbâFree)
500 Units / Bulk
2N5657G
TOâ225
(PbâFree)
500 Units / Bulk
Publication Order Number:
2N5655/D
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