2N5655 Datasheet, PDF (1/4 Pages) ON Semiconductor – POWER TRANSISTORS NPN SILICON

ON Semiconductor⁾
Plastic NPN Silicon
High-Voltage Power Transistor
. . . designed for use in line–operated equipment such as audio
output amplifiers; low–current, high–voltage converters; and AC line
relays.
• Excellent DC Current Gain –
hFE = 30–250 @ IC = 100 mAdc
• Current–Gain – Bandwidth Product –
fT = 10 MHz (Min) @ IC = 50 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current – Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
2N5655
2N5657
250
350
275
375
6.0
0.5
1.0
0.25
20
0.16
–65 to +150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
Characteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
θ_JC
6.25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(1) Indicates JEDEC Registered Data.}
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
40
2N5655
2N5657
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250–350 VOLTS
20 WATTS
321
STYLE 1:
PIN 1.
2.
3.
EMITTER
COLLECTOR
BASE
CASE 77–09
TO–225AA TYPE
30
50 mH
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Hg RELAY
+
6.0 V
300
X
TO SCOPE
Y
1.0
200
+
50 V
-
Figure 2. Sustaining Voltage Test Circuit
Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 7
Publication Order Number:
2N5655/D