2N5631 Datasheet, PDF (1/8 Pages) ON Semiconductor – POWER TRANSISTORS COMPLEMENTARY SILICON

ON Semiconductort
High-Voltage - High Power
Transistors
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector Emitter Sustaining Voltage –
V_CEO(sus) = 140 Vdc
• High DC Current Gain – @ I_C = 8.0 Adc
h_FE = 15 (Min)
• Low Collector–Emitter Saturation Voltage –
V_CE(sat) = 1.0 Vdc (Max) @ I_C = 10 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Emitter–Base Voltage}
Collector Current – Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Peak
V_CEO
V_CB
V_EB
I_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current – Continuous}
I_B
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @ TC = 25_C}
P_D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Derate above 25_C}
Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
θ_JC
Value
140
140
7.0
16
20
5.0
200
1.14
–65 to +200
Max
0.875
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
(1) Indicates JEDEC Registered Data.
200
150
100
NPN
2N5631
PNP
2N6031
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
140 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
50
0
0 20 40 60 80 100 120 140 160 180 200
T_C, TEMPERATURE (°C)
Figure 1. Power Derating
Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 0
Publication Order Number:
2N5631/D