2N5486 Datasheet, PDF (1/8 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

ON Semiconductort
JFET VHF/UHF Amplifiers
1 DRAIN
N–Channel — Depletion
3
GATE
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VDG
VGSR
ID
IG(f)
PD
TJ, Tstg
Value
25
25
30
10
350
2.8
–65 to +150
2 SOURCE
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
2N5486
1
2
3
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
V(BR)GSS
–25
—
—
Vdc
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100°C)
IGSS
—
—
—
–1.0
nAdc
—
–0.2
µAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
VGS(off)
Vdc
–2.0
—
–6.0
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
8.0
—
20
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yfs
mmhos
4000
—
8000
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Re(yis)
—
mmhos
—
1000
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
yos
mmhos
—
—
75
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Re(yos)
—
mmhos
—
100
Forward Transconductance
(VDS = 15 Vdc, VGS = 0, f = 400 MHz)
Re(yfs)
3500
—
mmhos
—
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 0
Publication Order Number:
2N5486/D