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2N5302 Datasheet, PDF (1/8 Pages) Wing Shing Computer Components – NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
ON Semiconductort
High-Power NPN Silicon
Transistor
. . . for use in power amplifier and switching circuits applications.
• Low Collector–Emitter Saturation Voltage –
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current – Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Case to Ambient
Symbol
VCEO
VCB
IC
IB
PD
TJ, Tstg
2N5302
60
60
30
7.5
200
1.14
–65 to +200
Symbol
θJC
θCA
Max
0.875
34
Unit
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
*Indicates JEDEC Registered Data.
2N5302
30 AMPERE
POWER TRANSISTOR
NPN SILICON
60 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
TA TC
8.0 200
6.0 150
TC
4.0 100
TA
2.0 50
00
0 20 40 60 80 100 120 140 160 180 200
TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 0
Publication Order Number:
2N5302/D