2N4401_10 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors

2N4401
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
40
Vdc
60
Vdc
6.0
Vdc
600
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
P_D
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg
−55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient R_qJA
200
°C/W
Thermal Resistance, Junction−to−Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
4401
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
February, 2010 − Rev. 4
2N4401
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
2N4401/D