2N3906 Datasheet, PDF (1/8 Pages) NXP Semiconductors – PNP switching transistor

2N3906
Preferred Device
General Purpose
Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCEO
40
VCBO
40
VEBO
5.0
IC
200
PD
625
5.0
Total Power Dissipation
@ TA = 60°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
250
PD
1.5
12
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to
+150
THERMAL CHARACTERISTICS (Note 1.)
Characteristic
Symbol
Max
Thermal Resistance,
Junction to Ambient
R_θJA
200
Thermal Resistance,
Junction to Case
R_θJC
83.3
1. Indicates Data in addition to JEDEC Requirements.
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
Watts
mW/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
TO–92
CASE 29
1
STYLE 1
2
3
MARKING DIAGRAMS
2N
3906
YWW
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
2N3906
2N3906RLRA
2N3906RLRE
2N3906RLRM
2N3906RLRP
2N3906RL1
2N3906ZL1
Package
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
2000/Tape & Reel
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Tape & Reel
2000/Ammo Pack
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 0
Publication Order Number:
2N3906/D