2N3700 Datasheet, PDF (1/3 Pages) STMicroelectronics – GENERAL PURPOSE AMPLIFIERS

2N3700
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Collector −Emitter Voltage
V_CEO
80
Vdc
Collector −Base Voltage
V_CBO
140
Vdc
Emitter −Base Voltage
V_EBO
7.0
Vdc
Collector Current − Continuous
I_C
1.0
Adc
Total Device Dissipation @ T_A = 25°C
Total Device Dissipation @ T_C = 25°C
Operating and Storage Junction
Temperature Range
P_T
500
mW
P_T
1.0
W
T_J, T_stg − 65 to
°C
+200
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
(Note 1)
Symbol
R_qJA
Max
325
Unit
°C/W
Thermal Resistance, Junction to Case
R_qJC
150 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. This number assumes a substrate of 1 oz. thick copper and a copper area of
550 mm².
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3700
JANTX2N3700
TO−18
Bulk
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 − Rev. 0
Publication Order Number:
2N3700/D