2N3637 Datasheet, PDF (1/6 Pages) Seme LAB – PNP SILICON TRANSISTOR

2N3634, 2N3634L, 2N3635,
2N3635L, 2N3636,
2N3636L, 2N3637, 2N3637L
Low Power Transistors
PNP Silicon
Features
• MIL−PRF−19500/357 Qualified
• Available as JAN, JANTX, JANTXV and JANHC
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol 2N3634/L 2N3636/L Unit
2N3635/L 2N3637/L
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current
− Continuous
V_CEO
V_CBO
V_EBO
I_C
−140
−175
Vdc
−140
−175
Vdc
−5.0
Vdc
1.0
Adc
Total Device Dissipation
P_T
@ T_A = 25°C
1.0
W
Total Device Dissipation
P_T
@ T_C = 25°C
5.0
W
Operating and Storage Junc- T_J, T_stg
−65 to +200
°C
tion Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
R_qJA
175 °C/W
Thermal Resistance, Junction to Case
R_qJC
35
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Level
Device
2N3634
2N3635
JAN
JANTX
JANTXV
JANHC
2N3636
2N3637
2N3634L
2N3635L
2N3636L
2N3637L
Package
TO−39
TO−5
Shipping
Bulk
Bulk
© Semiconductor Components Industries, LLC, 2013
1
November, 2013 − Rev. 1
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−5
CASE 205AA
STYLE 1
2N3634L
2N3635L
2N3636L
2N3637L
TO−39
CASE 205AB
STYLE 1
2N3634
2N3635
2N3636
2N3637
Publication Order Number:
2N3637/D