2N3019 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistor

2N3019
Low Power Transistor
NPN Silicon
Features
• MIL−PRF−19500/391 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol Value Unit
Collector −Emitter Voltage
V_CEO
80
Vdc
Collector −Base Voltage
V_CBO
140
Vdc
Emitter −Base Voltage
V_EBO
7.0
Vdc
Collector Current − Continuous
I_C
1.0
Adc
Total Device Dissipation @ T_A = 25°C
Total Device Dissipation @ T_C = 25°C
Operating and Storage Junction
Temperature Range
P_T
800
mW
P_T
5.0
W
T_J, T_stg − 65 to
°C
+200
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
R_qJA
195 °C/W
Thermal Resistance, Junction to Case
R_qJC
30
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−5
CASE 205AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3019
JANTX2N3019
TO−5
Bulk
JANTXV2N3019
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 − Rev. 0
Publication Order Number:
2N3019/D