1SS351-TB-E Datasheet, PDF (1/6 Pages) ON Semiconductor – Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP

Ordering number : EN3240C
1SS351
Schottky Barrier Diode
Dual Series Schottky Barrier Diode for Mixer and Detector
5V, 30mA, 0.69pF, CP
http://onsemi.com
Features
• _{Series connection of 2 elements in a small-sized package facilitates high-density mounting and}
permits 1SS351-applied equipment to be made smaller
• _{Small interterminal capacitance (C=0.69pF typ)}
• _{Small forward voltage (VF=0.23V max)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Peak Reverse Voltage
Forward Current
Junction Temperature
VRM
IF
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
5
V
30 mA
125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7013A-003
2.9
0.1
3
1SS351-TB-E
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TB
Marking
1
0.95
2
0.4
1 : Anode
2 : Cathode
3 : Anode / Cathode
CP
CH
TB
Electrical Connection
3
1
2
Semiconductor Components Industries, LLC, 2013
September, 2013
72512 TKIM/33098HA (KT)/53196GI (KOTO)/D149MO, TS 8-6255 No.3240-1/6