PSB35 Datasheet, PDF (2/2 Pages) Powersem GmbH – Single Phase Rectifier Bridge

200
[A] ^{1:TVJ= 150°C}
2:TVJ= 25°C
150
I-I-FF-S(-MO-V-)
1.6
1.4
IFSM (A)
TVJ=45°C TVJ=150°C
400
360
100
50
IF
1
2
0
1.0 1.5 2.0 2.5 3.0
VF[V]
Fig. 1 Forward current versus
voltage drop per diode
1.2
1
0.8
0.6
0 VRRM
1/2 VRRM
1 VRRM
0.4
100
101 t[ms] 102
103
Fig. 2 Surge overload current
per diode I_FSM: Crest value.
t: duration
3
10
2
As
TVJ=45°C
TVJ=150°C
2
10
1
2
46
10
t [ms]
Fig. 3 ∫i²dt versus time
(1-10ms) per diode (or thyristor)
[W] PSB 35
80
60
40
20
PV TO T
0
10
IF AV M
DC
sin .1 80 °
rec .1 20 °
re c. 60 °
re c. 30 °
30
0
[A ]
0.29 0.01
0.57
1.12
2.23
5.57
50
T am b
T⁵⁰C
55
= RTHCA [K/W]
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
°₁₅C₀
10 0
15 0
[K ]
Fig. 4 Power dissipation versus direct output current and ambient temperature
5
K/W
40
[A]
30
20
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
I _dAV
0
50
100 150 200
TC(°C)
Fig.5 Maximum forward current
at case temperature
4
3
Z _thJC
Z _thJK
2
1
Z _th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53
 2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20