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EESX1025 Datasheet, PDF (2/8 Pages) Omron Electronics LLC – Miniature Transmissive Photomicrosensor with 2- to 8-mm Slot Width and Phototransistor Output
EE-SX198/199/1018/1025/1041/1042/1070/1071
EE-SX198/199/1018/1025/1041/1042/1070/1071
Specifications
 ABSOLUTE MAXIMUM RATINGS (TA = 25°C (77°F))
Item
Emitter
Detector
Ambient temperature
Forward current
Reverse voltage
Collector-emitter
voltage
Collector current
Collector dissipation
Operating
Storage
Symbol
IF
VR
VCEO
IC
PC
Topr
Tstg
Rated value
50 mA*
4V
30 V
20 mA
100 mW*
-25°C to 85°C (-13°F to 185°F)**
-30°C to 100°C (-22°F to 212°F)
*Refer to Engineering Data if the ambient temperature is not within the normal room temperature range.
**The operating temperature of the EE-SX1041/1070 is -25° to 95°C (-13°F to 203°F).
 CHARACTERISTICS (TA = 25°C (77°F))
Item
Symbol
Emitter
Forward voltage
VF
Reverse current
IR
Detector
Peak emission wavelength λp(L)
Dark current
ID
Combination
Peak spectral sensitivity
wavelength
Light current (collector
current)
Collector-emitter saturated
voltage
Rising time (See Note.)
λp(P)
IL
VCE (sat)
tr
Falling time (See Note.) tf
EE-SX1018/1025/1041/1042/1070/
1071
Value
Condition
1.2 V typ.
1.5 V max.
IF = 30 mA
0.01 µA typ.
10 µA max.
VR = 4 V
940 nm typ.
IF = 20 mA
2 nA typ.
200 nA max.
VCE = 10 V 0x
850 nm typ.
VCE = 10 V
0.5 mA min.
14 mA max.
0.1 V typ.
0.4 V max.
4 µs typ.
4 µs typ.
IF = 20 mA
VCE = 10 V
IF = 20 mA
IL = 0.1 mA
VCC = 5 V
RL = 100 Ω
IL = 5 mA
EE-SX198/199
Value
1.2 V typ.
1.4 V max.
0.01 µA typ.
10 µA max.
940 nm typ.
2 nA typ.
200 nA max.
850 nm typ.
0.5 mA min.
14 mA max.
0.1 V typ.
0.4 V max.
4 µs typ.
4 µs typ.
Note: The following illustrations show the rising time, tr, and the falling time, tf.
Condition
IF = 20 mA
VR = 4 V
IF = 20 mA
VCE = 10 V 0x
VCE = 10 V
IF = 20 mA
VCE = 5 V
IF = 40 mA
IL = 0.5 mA
VCC = 5 V
RL = 100 Ω
IL = 5 mA
Input
0
Output
0
90%
10%
tr
tf
Input
t
t
RF
+
VF
--
VCC
Output
RL