G3VM-6 Datasheet, PDF (1/6 Pages) Omron Electronics LLC – Technical Information

MOS FET Relays
Technical Information
Introduction
New models with a wider range of characteristics provide an array of
solutions, meeting the needs of today’s high performance applications.
Our expanded range of MOS FET relays, Type G3VM, sets the
benchmark in Solid State Relays (SSRs). Products are manufactured
using the latest advances in automated production and include a
variety of improved construction technologies within the areas of the
input LED, PDA (Photo Diode Array used as a photocoupler) and
MOS FET chips used in the load switching circuit. As a result, further
reductions in package size and power requirements have been
achieved.
Combining the advantages of mechanical and solid state technology,
the new G3VM range gives you unprecedented capability to design.
All models featured include a double MOS FET load circuit, enabling
the designer complete versatility since it makes no difference
whether an AC or DC load in either direction is connected (Connec-
tion A). Thus, the MOS FET relay is a fully functional alternative to an
electromechanical relay with minimal additional drive circuitry.
The built-in Current Limit Function (CLR models) has many uses.
Traditionally used to clamp excessive over current fault conditions in
telecom equipment, this feature can also be used to good effect to
resist transient and short circuit conditions.
MOS FET relays are the ideal data and telecommunication solution
for line seizing, line switching, hook switching, Data Access Arrange-
ment (DAA) function, line transformer circuit control and other feature
phone functions. Central office applications require high reliability
and long life. Here the G3VM is ideal for use in the areas of Sub-
scriber Line Interfaces (SLICs) Multiplexers and Routers. In addition,
Local Area Networks (LANs) and Network Termination Units (NTUs)
including Set-Top Boxes (STBs) and Remote Metering Systems
(RMS) can take advantage of the G3VMs’ small size and low ON
resistance.
Advances in performance and cost reduction enable MOS FET
relays to be considered as good alternatives to Reed Relays in appli-
cation areas such as security motion detectors (standard and anti-
mask PIRs), and Automated Test Equipment (ATE) probe cards.
Glossary
Term
LED forward current
Repetitive peak LED forward
current
LED forward current
reduction rate
LED reverse voltage
Connection temperature
Load voltage (AC peak / DC)
Continuous load current
ON current reduction rate
Dielectric strength between
input and output
Operating temperature
Storage temperature
LED forward voltage
LED reverse current
Capacity between (LED)
terminals
Trigger LED forward current
Maximum resistance with
output ON
Current leakage when the
relay is open
Output Capacitance
Capacity between I/O
terminals
Insulation resistance
Turn-ON time
Turn-OFF time
Recommended Load Voltage
(AC peak / DC)
Symbol
I_F
I_FP
Description
Rated current that can flow continuously in the forward direction of the LED
Rated current that can flow momentarily in the forward direction of the LED
<I_F/°C Rated change of forward current flowing through the LED relative to ambient temperature above 25°C
V_R
T_J
V_OFF
I_O
<I_ON/°C
V_I-O
Rated reverse voltage that can be applied between the anode and the cathode
Rated temperature that can be allowed in the junction of the LED, Photodetector or MOS FET(s)
Rated voltage that can be applied between the MOS FET's output terminals in the OFF state
Rated current that can flow between the MOS FET's output terminals in the ON state
Rated change of load current flowing between MOS FET(s) output terminals relative to ambient tem-
perature above 25°C
Isolation voltage between input and output terminals for a specified time
T_a
Ambient temperature range in which the relay may be operated without impairment
T_stg Ambient temperature range in which the relay may be stored while not operating
V_F
Voltage drop between the LED's anode and cathode at a certain forward current
I_R
Leakage current flowing in the LED's reverse direction (between cathode and anode)
C_T
Electrostatic capacitance between the anode and the cathode terminals of the LED
I_FT
Minimum value of input current necessary to put the output MOS FET(s) in to the ON state
R_ON Resistance between the MOS FET's output terminals specified with reference to ON state current
I_LEAK Leakage current flowing between the MOS FET's output terminals in the OFF state
C_off Electrostatic capacitance between the output terminals in the OFF state
C_I-O Electrostatic capacitance between the input and output terminals of the relay
R_I-O Resistance between the input and output terminals at the specified voltage value
t_ON
Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from OFF
to ON state
t_OFF Time required for the output waveform to change from 0 (100%) to 90 (10%) after input goes from ON
to OFF state
V_DD Rated load voltage that can be applied between the MOS FET's output terminals
MOS FET Relays Technical Information
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