EESH3B Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive) EE-SH3 Series

Photomicrosensor (Transmissive)
EE-SH3 Series
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, R1
Two, 3.2±0.2
dia. holes
Two, C1.5
6.2
19±0.15
25.4
Matted
Center mark
3.4±0.2
Solder terminal
PCB terminal
Cross section AA Cross section AA
10.2
7.2±0.2
7.2±0.2
7.6±0.3
Four, 0.25
2.54±0.2
Internal Circuit
K
C
A
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Model
EE-SH3(-B)
EE-SH3-C(S)
EE-SH3-D(S)
EE-SH3-G(S)
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.2
3 < mm ≤ 6
±0.24
6 < mm ≤ 10
±0.29
10 < mm ≤ 18
±0.35
18 < mm ≤ 30
±0.42
■ Features
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aperture,
and model with a horizontal sensing aperture are available.
• Solder terminal models: EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
• PCB terminal models: EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Pulse forward current I_FP
1 A (see note 2)
Reverse voltage
V_R
4V
Detector
Collector–Emitter
voltage
V_CEO
30 V
Emitter–Collector
voltage
V_ECO
---
Collector current
I_C
20 mA
Collector dissipation P_C
100 mW (see note 1)
Ambient tem- Operating
perature
Storage
T_opr
–25°C to 85°C
T_stg
–30°C to 100°C
Soldering temperature
T_sol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient tempera-
ture exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
Description
Photomicrosensor
(transmissive)
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Model
EE-SH3(-B)
EE-SH3-C(S)
EE-SH3-D(S)
EE-SH3-G(S)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter Forward voltage
V_F
Reverse current
I_R
Peak emission wavelength λ_P
Detector Light current
I_L
Dark current
Leakage current
Collector–Emitter saturated
voltage
I_D
I_LEAK
V_{CE (sat)}
Peak spectral sensitivity
λ_P
wavelength
Rising time
tr
Falling time
tf
Value
EE-SH3(-B) EE-SH3-C(S) EE-SH3-D(S)
1.2 V typ., 1.5 V max.
0.01 μA typ., 10 μA max.
940 nm typ.
0.5 to 14 mA typ. 1 to 28 mA typ. 0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
---
850 nm typ.
EE-SH3-G(S)
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA,
V_CE = 10 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA,
I_L = 0.1 mA
V_CE = 10 V
4 μs typ.
4 μs typ.
V_CC = 5 V,
R_L = 100 Ω,
I_L = 5 mA
Photomicrosensor (Transmissive) EE-SH3 Series 169