EE-SY313 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Reflective)

Photomicrosensor (Reflective)
EE-SY313/-SY413
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
Five, 0.5
15 to 18
17 to 24
Internal Circuit
A
V
O
K
G
Terminal No.
Name
A
Anode
K
Cathode
V
Power supply
(Vcc)
O
Output (OUT)
G
Ground (GND)
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
I Features
• Incorporates an IC chip with a built-in detector element and amplifier.
• Incorporates a detector element with a built-in temperature com-
pensation circuit.
• Compact reflective Photomicrosensor (EE-SY310/-SY410) with a
molded housing and a dust-tight cover.
• A wide supply voltage range: 4.5 to 16 VDC
• Directly connects with C-MOS and TTL.
• Dark ON model (EE-SY313); Light ON model (EE-SY413)
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Reverse voltage
V_R
4V
Pulse forward current I_FP
1 A (see note 2)
Detector Power supply voltage V_CC
16 V
Output voltage
V_OUT
28 V
Output current
I_OUT
16 mA
Permissible output P_OUT
dissipation
250 mW
(see note 1)
Ambient Operating
Topr
–40°C to 65°C
temperature _Storage
Tstg –40°C to 85°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (reflective)
Model
Dark ON EE-SY313
Light ON EE-SY413
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Low-level output voltage
Symbol
V_F
I_R
λ_P
V_OL
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
920 nm typ.
0.12 V typ., 0.4 V max.
High-level output voltage V_OH
15 V min.
Current consumption
Peak spectral sensitivity
wavelength
LED current when output is OFF
LED current when output is ON
Hysteresis
Response frequency
Response delay time
Response delay time
I_CC
3.2 mA typ., 10 mA max.
λ_P
870 nm typ.
I_FT
10 mA typ., 20 mA max.
∆H
17% typ.
f
50 pps min.
t_PLH (t_PHL) 3 µs typ.
t_PHL (t_PLH) 20 µs typ.
Condition
I_F = 20 mA
V_R = 4 VD
I_F = 20 mA
Vcc = 4.5 to 16 V, I_OL = 16 mA, without incident light (EE-
SY313), with incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V, R_L = 1 kΩ, with incident light (EE-SY313), without
incident light (EE-SY413) (see notes 1 and 2)
Vcc = 16 V
V_CC = 4.5 to 16 V
V_CC = 4.5 to 16 V
V_CC = 4.5 to 16 V
V_CC = 4.5 to 16 V, I_F = 20 mA, I_OL = 16 mA
V_CC = 4.5 to 16 V, I_F = 20 mA, I_OL = 16 mA
V_CC = 4.5 to 16 V, I_F = 20 mA, I_OL = 16 mA
320
Photomicrosensor (Reflective) EE-SY313/-SY413