EE-SY169 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Phototransistor Output with Convergent Lens for Precise Sensing

Photomicrosensor (Reflective)
EE-SY169
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizon-
tally and vertically.
• With a red LED sensing dyestuff-type inks.
• Limited reflective model.
• For lesser LED forward current, use EE-SY169B.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Surface A
1±0.1 dia.
(see note)
(see note)
Two, C0.2
1±0.1 dia.
Internal Circuit
A
C
K
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
±0.375
±0.45
±0.55
18 < mm ≤ 30
±0.65
Item
Symbol
Rated value
Emitter
Forward current I_F
40 mA (see note 1)
Pulse forward
I_FP
current
300 mA
(see note 2)
Reverse voltage V_R
3V
Detector
Collector–Emitter V_CEO
voltage
30 V
Emitter–Collector V_ECO
---
voltage
Collector current I_C
20 mA
Collector
dissipation
P_C
100 mW
(see note 1)
Ambient
Operating
temperature _Storage
Topr
0° C to 70° C
Tstg
–20° C to 80° C
Soldering temperature
Tsol
260° C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
Description
Photomicrosensor (reflective)
Model
EE-SY169
■ Electrical and Optical Characteristics (Ta = 25° C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Symbol
V_F
I_R
λ_P
I_L
Value
1.85 V typ., 2.3 V max.
0.01 µA typ., 10 µA max.
660 nm typ.
160 µA min., 2,000 µA max.
Rising time
Falling time
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
2 nA typ., 200 nA max.
2 µA max.
---
850 nm typ.
30 µs typ.
30 µs typ.
Condition
I_F = 20 mA
V_R = 3 V
I_F = 20 mA
I_F = 20 mA, V_CE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
V_CE = 5 V, 0 lx
I_F = 20 mA, V_CE = 5 V with no reflection
---
V_CE = 5 V
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Photomicrosensor (Reflective) EE-SY169
1