EE-SY125 Datasheet, PDF (1/6 Pages) Omron Electronics LLC – Photomicrosensor (Reflective)

Photomicrosensor (Reflective)
EE-SY125
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
• Ultra-compact model.
• PCB surface mounting type
I Absolute Maximum Ratings (Ta = 25°C)
Internal Circuit
A
C
K
E
Unless otherwise specified, the
tolerances are ±0.15 mm.
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Item
Symbol
Emitter
Forward current I_F
Pulse forward
I_FP
current
Reverse voltage V_R
Detector
Collector–Emitter V_CEO
voltage
Emitter–Collector V_ECO
voltage
Collector current I_C
Collector
P_C
dissipation
Ambient
Operating
Topr
temperature _Storage
Tstg
Soldering temperature
Tsol
Rated value
50 mA (see note 1)
1 A (see note 2)
4V
30 V
5V
20 mA
75 mW (see note 1)
–25°C to 85°C
–40°C to 100°C
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (reflective)
Model
EE-SY125
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Rising time
Falling time
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
V_F
I_R
λ_P
I_L
Value
1.2 V typ., 1.4 V max.
0.01 µA typ., 10 µA max.
950 nm typ.
50 µA min., 300 µA max.
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
2 nA typ., 200 nA max.
200 nA max.
---
930 nm typ.
35 µs typ.
25 µs typ.
Condition
I_F = 20 mA
V_R = 4 V
I_F = 4 mA
I_F = 4 mA, V_CE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
V_CE = 10 V, 0 lx
I_F =4 mA, V_CE = 2 V with no reflection
---
V_CE = 10 V
V_CC = 2 V, R_L = 1 kΩ, I_L = 100 µA
V_CC = 2 V, R_L = 1 kΩ, I_L = 100 µA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
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Photomicrosensor (Reflective) EE-SY125