EE-SY1200 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Reflective)

EE-SY1200
CSM_EE-SY1200_E_1_1
Photomicrosensor (Reflective)
■ Dimensions
Detector center Emitter center
(0.7)
1.9
(1)
(0.8) ^(0.8)
3.2
1.1
E
1.2
C
K
0.7
A
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
(Unit: mm)
Note.
Unless otherwise specified tolerances
are ±0.15.
No burrs dimensions are included in out-
line dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is part
Au plating area.
Recommended Soldering Pattern
2-1 2-1.7 2-1
2-0.65
2-0.45
2-0.65
Note 1. The shaded portion in the
above figure may cause short-
ing. Do not wire in this portion.
2. The dimensional tolerance for
the recommended soldering
pattern is ±0.1 mm.
Internal Circuit
C
A
E
K
■ Features
• Ultra-compact model.
• PCB surface mounting type.
• High S/N ratio
(High light current / Low leakage current)
■ Absolute Maximum Ratings
(Ta=25°C)
Item
Forward current
Emitter
Pulse forward
current
Reverse voltage
Collector-Emitter
voltage
Detector
Emitter-Collector
voltage
Collector current
Collector dissipa-
tion
Operating temperature
Storage temperature
Reflow soldering temperature
Symbol Rated value Unit
IF
50^*1
mA
IFP
500^*2
mA
VR
4
V
VCEO
30
V
VECO
IC
PC
Topr
Tstg
Tsol
5
V
20
mA
50^*1
mW
−25 to +85 °C
−40 to +100 °C
240^*3
°C
*1. Refer to the temperature rating chart if the ambient tem-
perature exceeds 25°C.
*2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
*3. Complete soldering within 10 seconds for reflow soldering.
■ Electrical and Optical Characteristics (Ta=25°C)
Item
Symbol
MIN.
Value
TYP.
MAX.
Unit
Condition
Forward voltage
VF
---
1.2
1.4
V IF = 20 mA
Emitter Reverse current
IR
---
---
10
μA VR = 4 V
Peak emission wave-
length
λP
---
940
---
nm ---
Light current 1
I L1
200
---
1000
μA
IF = 10 mA, VCE = 2 V, Aluminum-
deposited surface, d = 4 mm*¹
Light current 2
I L2
150
---
---
μA
IF = 4 mA, VCE = 2 V, Aluminum-de-
posited surface, d = 1 mm*¹
Dark current
ID
---
2
200
nA VCE = 10 V, 0 lx
Detector Leakage current 1
I LEAK1
---
Leakage current 2
I LEAK2
---
Collector-Emitter satu-
rated voltage
VCE (sat)
---
Peak spectral sensitivi-
ty wavelength
λP
---
Rising time
tr
---
Falling time
tf
---
---
500
nA
IF = 10 mA, VCE = 2 V,
with no reflection*²
---
200
nA
IF = 4 mA, VCE = 2 V,
with no reflection*²
---
---
V ---
850
---
nm ---
30
---
μs
VCC = 2 V, RL = 1 kΩ,
IL = 100 μA, d = 1 mm*¹
30
---
μs
VCC = 2 V, RL = 1 kΩ,
IL = 100 μA, d = 1 mm*¹
*1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
*2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which
is reflected from surroundings of the Photomicrosensor and /or the background object.
Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.
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