EE-SY110 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Reflective)

Photomicrosensor (Reflective)
EE-SY110
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, 0.5
Four, R1.5
15.2±0.2
Four, 0.25
15 to 18
Internal Circuit
A
C Unless otherwise specified, the
tolerances are as shown below.
K
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.2
±0.24
±0.29
±0.35
±0.42
I Features
• Compact reflective model with a molded housing.
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Ambient Operating
temperature _Storage
Soldering temperature
Symbol
Rated value
I_F
50 mA (see note 1)
I_FP
1 A (see note 2)
V_R
V_CEO
4V
30 V
V_ECO
---
I_C
20 mA
P_C
100 mW (see note 1)
Topr
–40°C to 85°C
Tstg
–40°C to 85°C
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (reflective)
Model
EE-SY110
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Rising time
Falling time
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
V_F
I_R
λ_P
I_L
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
200 µA min., 2,000 µA max.
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
2 nA typ., 200 nA max.
2 µA max.
---
850 nm typ.
30 µs typ.
30 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
V_CE = 10 V, 0 lx
I_F = 20 mA, V_CE = 10 V with no
reflection
---
V_CE = 10 V
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
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Photomicrosensor (Reflective) EE-SY110