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| EE-SX1137 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive) | |||
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Photomicrosensor (Transmissive)
EE-SX1137
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
Internal Circuit
K
C Unless otherwise specified, the
tolerances are as shown below.
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ⤠6
6 < mm ⤠10
10 < mm ⤠18
18 < mm ⤠30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
I Features
⢠General-purpose model with a 5-mm-wide slot.
⢠PCB mounting type.
⢠High resolution with a 0.5-mm-wide aperture.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
IF
50 mA (see note 1)
Pulse forward
IFP
1 A (see note 2)
current
Reverse voltage
VR
4V
Detector
CollectorâEmitter VCEO
voltage
30 V
EmitterâCollector VECO
---
voltage
Collector current IC
20 mA
Collector dissipation PC
100 mW (see note 1)
Ambient Operating
temperature Storage
Topr
â25°C to 85°C
Tstg
â30°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1137
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Falling time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
CollectorâEmitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
λP
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 lx
---
IF = 20 mA, IL = 0.1 mA
VCE = 10 V
VCC = 5 V, RL = 100 â¦, IL = 5 mA
VCC = 5 V, RL = 100 â¦, IL = 5 mA
256
Photomicrosensor (Transmissive) EE-SX1137
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