EE-SX1115 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1115
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, C0.3
Four, R0.1 1.03
5
1.35
+0.06
−0.01
1.35
+0.06
−0.01
Part B ^0.2
Four, R0.1
1.35
+0.06
−0.01
1.03
14.5
1.35
+0.06
−0.01
Part C
2.5
Four, 0.25
K
14
5
A
A
(11.2)
Internal Circuit
A
B
(2.1)
4.2±0.1
Optical axis
0.5±0.05
12±0.4
2-2
5 min.
C
E
C
Four, 0.5
(1.94)
Cross section AA
K
C _{Unless otherwise specified, the}
tolerances are as shown below.
A
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
I Features
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current I_F
50 mA (see note 1)
Pulse forward
I_FP
current
1 A (see note 2)
Reverse voltage V_R
4V
Detector
Collector–Emitter V_CEO
voltage
30 V
Emitter–Collector V_ECO
---
voltage
Collector current I_C
20 mA
Collector
dissipation
P_C
100 mW (see note 1)
Ambient
Operating
temperature _Storage
Topr
–25°C to 85°C
Tstg
–30°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1115
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Falling time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA, I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
254
Photomicrosensor (Transmissive) EE-SX1115