EE-SX1106 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1106
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, C0.7
5.4
Four, 0.5
5 min.
Two, C0.2
Internal Circuit
Optical
axis
Gate
Two, R1
Four, 0.2
1_−^00.1 dia
1.4
0
−0.1
dia
■ Features
• Ultra-compact with a slot width of 3 mm.
• PCB mounting type.
• High resolution with a 0.4-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Item
Emitter
Forward current
Pulse forward
current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Ambient Operating
temperature _Storage
Soldering temperature
Symbol Rated value
I_F
50 mA (see note 1)
I_FP
---
V_R
V_CEO
5V
30 V
V_ECO
4.5 V
I_C
30 mA
P_C
80 mW (see note 1)
Topr –25° C to 85° C
Tstg –30° C to 85° C
Tsol 260° C (see note 2)
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Unless otherwise specified,
the tolerances are ±0.2 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2. Complete soldering within 3 seconds.
■ Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1106
■ Electrical and Optical Characteristics (Ta = 25° C)
Emitter
Detector
Rising time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Falling time
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
Value
1.3 V typ., 1.6 V max.
10 µA max.
950 nm typ.
0.2 mA min.
500 nA max.
---
0.4 V max.
800 nm typ.
10 µs typ.
tf
10 µs typ.
Condition
I_F = 50 mA
V_R = 5 V
I_F = 50 mA
I_F = 20 mA, V_CE = 5 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA, I_L = 0.1 mA
V_CE = 5 V
V_CC = 5 V, R_L = 100 Ω,
I_F = 20 mA
V_CC = 5 V, R_L = 100 Ω,
I_F = 20 mA
Photomicrosensor (Transmissive) EE-SX1106
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