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EE-SX1096 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)
Photomicrosensor (Transmissive)
EE-SX1096
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, R1
25±0.2
19±0.15
Two, 3.2±0.2 dia. holes
5±0.2 6±0.2
Four, C0.3 Two, C2
2.1±0.15
0.5±0.1
3±0.4
Four, 0.25
Cross section BB
2.1±0.15
(Optical axis)
10±0.2
7.2±0.2
2.5±0.1
Four, 0.5
0.5±0.1
Cross section AA
Internal Circuit
K
C Unless otherwise specified, the
tolerances are as shown below.
A
E
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
■ Features
• General-purpose model with a 3.4-mm-wide slot.
• Mounts to PCBs or connects to connectors.
• High resolution with a 0.5-mm-wide aperture.
• With a horizontal sensing slot.
• OMRON’s XK8-series Connectors can be connected without sol-
dering. Contact your OMRON representative for information on
obtaining XK8-series Connectors.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Item
Symbol Rated value
Emitter
Forward current
IF
50 mA (see note 1)
Pulse forward current IFP
1 A (see note 2)
Reverse voltage
VR
4V
Detector
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector VECO ---
voltage
Collector current IC
20 mA
Collector dissipation PC
100 mW (see note 1)
Ambient Operating
temperature Storage
Topr –25° C to 85° C
Tstg –30° C to 100° C
Soldering temperature
Tsol 260° C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1096
■ Electrical and Optical Characteristics (Ta = 25° C)
Emitter
Detector
Rising time
Falling time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
VF
IR
λP
IL
ID
ILEAK
VCE (sat)
λP
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
Condition
IF = 30 mA
VR = 4 V
IF = 20 mA
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 lx
---
IF = 20 mA, IL = 0.1 mA
VCE = 10 V
VCC = 5 V, RL = 100 Ω, IL = 5 mA
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Photomicrosensor (Transmissive) EE-SX1096
1