EE-SX1082 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1082
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
E
C
Internal Circuit
K
C
Unless otherwise specified, the
A
E _{tolerances are ±0.2 mm.}
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
I Features
• Horizontal sensing aperture.
• PCB mounting type.
• High resolution with a 0.2-mm-wide aperture.
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Pulse forward
current
I_FP
1 A (see note 2)
Reverse voltage
V_R
4V
Detector
Collector–Emitter V_CEO
voltage
30 V
Emitter–Collector V_ECO ---
voltage
Collector current I_C
20 mA
Collector dissipation P_C
100 mW (see note 1)
Ambient Operating
temperature _Storage
Topr –40°C to 85°C
Tstg –40°C to 100°C
Soldering temperature
Tsol 260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1082
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter Forward voltage
Reverse current
Peak emission wavelength
Detector Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
920 nm typ.
0.12 mA min.
2 nA typ., 200 nA max.
---
0.08 V typ., 0.4 V max.
850 nm typ.
100 µs typ.
1,000 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 5 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA, I_L = 0.05 mA
V_CE = 10 V
V_CC = 5 V, R_L = 50 kΩ, I_L = 0.1 mA
V_CC = 5 V, R_L = 50 kΩ, I_L = 0.1 mA
180
Photomicrosensor (Transmissive) EE-SX1082