EE-SX1061 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1061
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
• General-purpose model with a 4.6-mm-wide slot.
• PCB mounting type.
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Internal Circuit
K
C _{Unless otherwise specified, the}
tolerances are as shown below.
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.2
±0.24
±0.29
±0.35
±0.42
Emitter
Item
Forward current
Pulse forward
current
Reverse voltage
Detector
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector
dissipation
Ambient
Operating
temperature _Storage
Soldering temperature
Symbol
I_F
I_FP
Rated value
50 mA (see note
1)
---
V_R
V_CEO
4V
30 V
V_ECO
---
I_C
20 mA
P_C
100 mW
(see note 1)
Topr
–40°C to 85°C
Tstg
–40°C to 100°C
Tsol
260°C
(see note 2)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1061
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter Forward voltage
Reverse current
Peak emission wavelength
Detector Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
1.3 mA min., 26 mA max.
2 nA typ., 200 nA max.
---
0.8 V max.
850 nm typ.
1,000 µs max.
1,000 µs max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 12 V
V_CE = 10 V, 0 lx
---
I_F = 10 mA, Vcc = 12 V, R_L = 22k Ω
V_CE = 10 V
V_CC = 12 V, R_L = 22k Ω, I_L = 10 mA
V_CC = 12 V, R_L = 22k Ω, I_L = 10 mA
242
Photomicrosensor (Transmissive) EE-SX1061