EE-SX1049 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1049
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
9
4
Optical
axis
Two, 0.5
Four, C0.3
2
A
B
2 max.
1.5
Optical
axis
5.2
0
−0.2
1.5
1.2
9 min.
Four, 0.5
E 2.5 C
Cross section AA
C0.3
Internal Circuit
2 max.
Optical
axis
Optical
axis
0.7±0.1
1.2
0
−0.05
dia.
AB
6±0.2
Four, 0.25
0.3 max.
0.25 max.
K 2.5 A
Cross section BB
K
C _{Unless otherwise specified, the}
tolerances are as shown below.
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
I Features
• Compact with a slot width of 2 mm.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Pulse forward current I_FP
1 A (see note 2)
Reverse voltage
V_R
4V
Detector
Collector–Emitter
voltage
V_CEO
30 V
Emitter–Collector
voltage
V_ECO
---
Collector current
I_C
20 mA
Collector dissipation P_C
Ambient Operating
temperature _Storage
Topr
Tstg
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
Soldering temperature
Tsol 260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1049
I Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Detector
Rising time
Falling time
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA, I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
150
Photomicrosensor (Transmissive) EE-SX1049