EE-SX1031 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SX1031
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3
0.5
13.6
0.2
10.2
3
13.6
3.4
A
Silver or white
marking
Optical Optical
axis (2) axis (1)
7.1±0.13
3.2
Two, 0.5
Optical
axis
7.2
2-2.1
A
7.6
Eight, 0.25 Eight, 0.5
7.1
Four, 2.54
Cross section AA
ᴚ2ᴛ
ᴚ1ᴛ
(Bottom View)
K (1)
A (1)
K (2)
A (2)
C (1)
E (1)
C (2)
E (2)
I Features
• High resolution with a 0.5-mm-wide aperture.
• Separate LED/Phototransistor combinations within a single housing.
• PCB mounting type.
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Emitter
Item
Forward current
Reverse voltage
Detector
Collector–Emitter
voltage
Collector current
Collector dissipation
Ambient Operating
temperature _Storage
Soldering temperature
Symbol Rated value
I_F
50 mA (see note)
V_R
4V
V_CEO
30 V
I_C
20 mA
P_C
100 mW
Topr –25°C to 85°C
Tstg –30°C to 100°C
Tsol 260°C
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor (transmissive)
Model
EE-SX1031
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Forward voltage
Reverse current
Peak emission wavelength
Detector
Light current
Dark current
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Rising time (see note)
Falling time
Symbol
V_F
I_R
λ_P
I_L
I_D
V_CE (sat)
λ_P
tr
tf
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 to 14 mA max.
2 nA typ., 200 nA max.
0.15 V typ., 0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 lx
I_F = 20 mA, I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
Note: Refer to Response Time Measurement Circuit.
206
Photomicrosensor (Transmissive) EE-SX1031