EE-SV3 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SV3 Series
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
Center mark
Four,
R1
Four, R1
Four,
0.25
Two,
3.2±0.2
dia.
holes
Four, 1.5
2.54±0.2
Cross section AA
Two,
3.2±0.2 dia.
holes
Four, 0.5
2.54±0.2
Cross section AA
Internal Circuit
Model
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
K
C
Unless otherwise specified, the
tolerances are as shown below.
A
E
Dimensions Tolerance
Terminal No. Name
A
Anode
K
Cathode
C
Collector
E
Emitter
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
±0.2
±0.24
±0.29
±0.35
±0.42
I Features
• High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing aper-
ture, and model with a horizontal sensing aperture are available.
• Solder terminal models EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS
• PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Pulse forward
current
I_FP
1 A (see note 2)
Reverse voltage
V_R
4V
Detector
Collector–Emitter
voltage
V_CEO
30 V
Emitter–Collector V_ECO
---
voltage
Collector current
I_C
20 mA
Ambient
temperature
Collector dissipation P_C
Operating
Topr
Storage
Tstg
100 mW (see note 1)
–25°C to 85°C
–30°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor
(transmissive)
Aperture (a x b)
2.1 x 0.5
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Model
EE-SV3(-B)
EE-SV3-C(S)
EE-SV3-D(S)
EE-SV3-G(S)
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter
Detector
Forward voltage
V_F
Reverse current
I_R
Peak emission wavelength λ_P
Light current
I_L
Dark current
I_D
Leakage current
Collector–Emitter
saturated voltage
Peak spectral sensitivity
wavelength
Rising time
Falling time
I_LEAK
V_CE (sat)
λ_P
tr
tf
Value
EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S)
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 to 14 mA 1 to 28 mA
0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
---
850 nm typ.
4 µs typ.
4 µs typ.
EE-SV3-G(S)
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA,
V_CE = 10 V
V_CE = 10 V,
0 lx
---
I_F = 20 mA,
I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V,
R_L = 100 Ω,
I_L = 5 mA
224
Photomicrosensor (Transmissive) EE-SV3 Series