EE-SJ3 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

Photomicrosensor (Transmissive)
EE-SJ3 Series
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3 Center mark
6.2
I Features
• High-resolution model with a 0.2-mm-wide sensing aperture, high-
sensitivity model with a 1-mm-wide sensing aperture, and model
with a horizontal sensing aperture are available.
• RoHS Compliant.
I Absolute Maximum Ratings (Ta = 25°C)
7.2±0.2
6
Cross section BB
0.2
10.2
7.6±0.3
Four, 0.25
Four, 0.5
2.54±0.2
Cross section AA
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Model
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Tolerance
3 mm max.
±0.3
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Item
Symbol
Rated value
Emitter
Forward current I_F
50 mA (see note 1)
Pulse forward
I_FP
current
1 A (see note 2)
Reverse voltage V_R
4V
Detector
Collector–Emitter V_CEO
voltage
30 V
Emitter–Collector V_ECO
---
voltage
Collector current I_C
20 mA
Collector
dissipation
P_C
100 mW (see note 1)
Ambient
Operating
temperature _Storage
Topr
–25°C to 85°C
Tstg
–30°C to 100°C
Soldering temperature
Tsol
260°C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
Description
Photomicrosensor
(transmissive)
Aperture (a x b)
2.1 x 1.0
2.1 x 0.2
0.5 x 2.1
Model
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
I Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter
Detector
Forward voltage
Reverse current
Peak emission
wavelength
Light current
Dark current
Leakage current
Collector–Emitter
saturated voltage
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
Peak spectral sensitivity λ_P
wavelength
Rising time
tr
Falling time
tf
Value
EE-SJ3-C
EE-SJ3-D
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
1 to 28 mA typ.
0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ.,
---
0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
EE-SJ3-G
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 lx
---
I_F = 20 mA,
I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V,
R_L = 100 Ω,
I_L = 5 mA
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Photomicrosensor (Transmissive) EE-SJ3 Series