EE-SJ3-C Datasheet, PDF (1/3 Pages) Omron Electronics LLC – Photomicrosensor (Transmissive)

EE-SJ3 Series
Dimensions
Note: All units are in millimeters unless otherwise indicated.
0.3 Center mark
6.2
Photomicrosensor
(Transmissive)
Features
• High-resolution model with a 0.2-mm-wide sensing
aperture, high-sensitivity model with a 1-mm-wide sensing
aperture, and model with a horizontal sensing aperture
are available.
• All models have a 3 mm wide slot.
7.2±0.2
6
Cross section BB
0.2
10.2
7.6±0.3
Four, 0.25
Four, 0.5
2.54±0.2
Cross section AA
Model
Aperture (a x b)
EE-SJ3-C
2.1 x 1.0
Internal Circuit
EE-SJ3-D
2.1 x 0.2
EE-SJ3-G
0.5 x 2.1
K
C
Unless otherwise specified, the
tolerances are as shown below.
A
E
Dimensions
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Ordering Information
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current I_F
50 mA
(see note 1)
Pulse forward
I_FP
current
1A
(see note 2)
Detector
Reverse voltage
Collector--Emitter
voltage
V_R
V_CEO
4V
30 V
Emitter--Collector V_ECO
---
voltage
Collector current I_C
Collector
P_C
dissipation
20 mA
100 mW
(see note 1)
Ambient
Operating
temperature _Storage
Topr
--25°C to 85°C
Tstg
--30°C to 100°C
Soldering temperature
Tsol
260°C
(see note 3)
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Photomicrosensor (Transmissive)
Description
Part number
EE-SJ3-C
EE-SJ3-D
EE-SJ3-G
Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Emitter
Detector
Rising time
Forward voltage
Reverse current
Peak emission
wavelength
Light current
Dark current
Leakage current
Collector--Emitter
saturated voltage
Peak spectral sensitivity
wavelength
Falling time
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
EE-SJ3-C
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
Value
EE-SJ3-D
1 to 28 mA typ.
0.1 mA min.
2 nA typ., 200 nA max.
---
0.1 V typ.,
---
0.4 V max.
850 nm typ.
4 µs typ.
4 µs typ.
EE-SJ3-G
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 ℓx
---
I_F = 20 mA,
I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V,
R_L = 100 Ω,
I_L = 5 mA