EE-SH3 Datasheet, PDF (1/3 Pages) Omron Electronics LLC – Photomicrosensor Transmissive

EE-SH3 Series
Photomicrosensor
(Transmissive)
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, R1
Two, C1.5
Two, 3.2 dia.
holes
6.2
19±0.15
25.4
Matted
Center mark
3.4±0.2
Solder terminal
Cross section AA
PCB terminal
Cross section AA
Features
• All models have 3.4 mm wide slot.
• Solder terminal models:
EE-SH3/-SH3-CS/-SH3-DS/-SH3-GS
• PCB terminal models:
EE-SH3-B/-SH3-C/-SH3-D/-SH3-G
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA
(see note 1)
10.2
7.2±0.2
7.2±0.2
Pulse forward
I_FP
current
1A
(see note 2)
7.6±0.3
Four, 0.25
2.54±0.2
Model
Aperture (a x b)
EE-SH3(-B)
2.1 x 0.5
EE-SH3-C(S) 2.1 x 1.0
Internal Circuit
EE-SH3-D(S)
EE-SH3-G(S)
2.1 x 0.2
0.5 x 2.1
K
C
Unless otherwise specified, the
tolerances are as shown below.
Detector
Ambient
temperature
Reverse voltage
Collector--Emitter
voltage
Emitter--Collector
voltage
Collector current
Collector
dissipation
Operating
Storage
V_R
V_CEO
V_ECO
I_C
P_C
Topr
Tstg
Soldering temperature
Tsol
4V
30 V
---
20 mA
100 mW
(see note 1)
--25°C to
85°C
--30°C to
100°C
260°C
(see note 3)
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.2
±0.24
±0.29
±0.35
±0.42
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Ordering Information
Photomicrosensor (Transmissive)
Description
Part number
EE-SH3(-B)
EE-SH3-C(S)
EE-SH3-D(S)
EE-SH3-G(S)
Electrical and Optical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector--Emitter saturated voltage
Peak spectral sensitivity wavelength
Rising time
Falling time
Symbol
V_F
I_R
λ_P
I_L
I_D
Value
EE-SH3(-B)
EE-SH3-C(S) EE-SH3-D(S)
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 to 14 mA
typ.
1 to 28 mA typ.
2 nA typ., 200 nA max.
0.1 mA min.
I_LEAK
---
V_CE (sat) 0.1 V typ., 0.4 V max.
---
λ_P
850 nm typ.
tr
4 µs typ.
tf
4 µs typ.
EE-SH3-G(S)
0.5 to 14 mA
0.1 V typ.,
0.4 V max.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA,
V_CE = 10 V
V_CE = 10 V,
0 ℓx
---
I_F = 20 mA,
I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V,
R_L = 100 Ω,
I_L = 5 mA