EE-SB5 Datasheet, PDF (1/4 Pages) Omron Electronics LLC – Photomicrosensor (Reflective)

Photomicrosensor (Reflective)
EE-SB5(-B)
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
Two, 3.2±0.2 dia. holes
Optical axis
Optical axis
■ Features
• Dust-tight construction.
• With a visible-light intercepting filter which allows objects to be
sensed without being greatly influenced by the light radiated from
fluorescent lamps.
• Mounted with M3 screws.
• Model with soldering terminals (EE-SB5).
• Model with PCB terminals (EE-SB5-B).
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
9±0.2
11.5±0.2
7.62±0.3
Four, 0.25
2.54±0.2
EE-SB5
Four, 0.5
2.54±0.2
EE-SB5-B
Internal Circuit
A
C
K
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3 < mm ≤ 6
6 < mm ≤ 10
10 < mm ≤ 18
18 < mm ≤ 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Item
Symbol Rated value
Emitter
Forward current
I_F
50 mA (see note 1)
Pulse forward current I_FP
1 A (see note 2)
Detector
Reverse voltage
Collector–Emitter
voltage
V_R
V_CEO
4V
30 V
Emitter–Collector V_ECO ---
voltage
Collector current I_C
20 mA
Collector dissipation P_C
Ambient Operating
Topr
temperature _Storage
Tstg
100 mW (see note 1)
–25° C to 80° C
–30° C to 80° C
Soldering temperature
Tsol 260° C (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25° C.
2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
■ Ordering Information
Description
Photomicrosensor (reflective)
with soldering terminals
Photomicrosensor (reflective)
with PCB terminals
Model
EE-SB5
EE-SB5-B
■ Electrical and Optical Characteristics (Ta = 25° C)
Emitter
Detector
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Rising time
Falling time
Collector–Emitter saturated
voltage
Peak spectral sensitivity
wavelength
Symbol
V_F
I_R
λ_P
I_L
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
200 µA min., 2,000 µA max.
I_D
I_LEAK
V_CE (sat)
λ_P
tr
tf
2 nA typ., 200 nA max.
2 µA max.
---
850 nm typ.
30 µs typ.
30 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
White paper with a reflection ratio of
90%, d = 5 mm (see note)
V_CE = 10 V, 0 lx
I_F = 20 mA, V_CE = 10 V with no
reflection
---
V_CE = 10 V
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
V_CC = 5 V, R_L = 1 kΩ, I_L = 1 mA
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Photomicrosensor (Reflective) EE-SB5(-B)
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