MCL4148 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

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Features
MCL4148
• Saving space
SILICON EPITAXIAL PLANAR DIODE
LS-31
• Hermetic sealed parts
• Fits onto SOD 323 / SOT 23 footprints
• Electrical data identical with the device 1N4148
• Micro Melf package
Applications
Extreme fast switches
Absolute Maximum Ratings (T_j = 25^OC)
Glass Case MicroMELF
Parameter
Test
Repetitive Peak Reverse Voltage
-
Reverse Voltage
-
Peak Forward Surge Current
Repetitive Peak Forward Current
t_p = 1μS
-
Forward Current
-
Average Forward Current
Power Dissipation
V_R = 0
-
Junction Temperature
-
Storage Temperature Range
-
Maximum Thermal Resistance (T_j = 25 ^OC)
Symbol
V_RRM
V_R
I_FSM
I_FRM
I_F
I_FAV
P_tot
T_j
T_s
Parameter
Junction ambient
Test Conditions
mounted on epoxy-glass hard tissue, 35μm
copper clad, 0.9 mm² copper area per electrode
Value
100
75
2
450
200
150
500
175
-65 … +175
Symbol
R_thJA
Value
500
Unit
V
V
A
mA
mA
mA
mW
O_C
O_C
Unit
K/W
Characteristics at T_j = 25 ^OC
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
Reverse Current
Breakdown Voltage
I_F = 50mA
V_R = 20V
V_R = 20V, T_j = 150 ^OC
V_R = 75V
I_R = 100uA, tp/T = 0.01,
Tp = 0.3ms
V_F
-
0.86
1
V
I_R
-
-
25
nA
I_R
-
-
50
μA
I_R
-
-
5
μA
V_(BR)
100
-
-
V
Diode Capacitance
V_R = 0, f = 1MH_Z, V_HF = 50mV
C_D
-
-
4
pF
Rectification Efficiency V_HF = 2V, f = 100MH_Z
η_r
45
-
-
%
Reverse Recovery
I_F = I_R = 10mA, Ir A
t_rr
-
-
8
ns
Time
I_F = 10mA, V_R = 6V, i_R = 0.1xl_R,
t_rr
-
-
4
ns
R_L = 100Ω
1