BAV21WS Datasheet, PDF (1/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – High Voltage Switching Diode

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BAV19WS~BAV21WS ^{SWITCHING DIODE}
Plastic-Encapsulate Diodes
FEATURES
z Low Reverse Current
z Surface Mount Package Ideally Suited for Automatic Insertion
z Fast Switching Speed
z For General Purpose Switching Applications
MARKING:
BAV19WS
A8
BAV20WS
T2
BAV21WS
T3
-
+
SOD-323
A8
T2
T3
The marking bar indicates the cathode
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Symbol
Parameter
BAV19WS
Value
Unit
BAV20WS BAV21WS
V_RM
Non-Repetitive Peak Reverse Voltage
120
200
250
V
V_RRM
V_RWM
V_R(RMS)
I_O
I_FSM
P_D
R_ΘJA
T_j
T_stg
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
100
150
71
106
200
2.0
250
500
150
-55~+150
200
V
141
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min ^Typ Max
Unit
Reverse current
V_R=100V
I_R
V_R=150V
V_R=200V
BAV19WS
BAV20WS
BAV21WS
0.1
0.1
uA
0.1
Forward voltage
Total capacitance
I_F=100mA
V_F
I_F=200mA
C_tot
V_R=0V,f=1MHz
1
V
1.25
5
pF
Reverse recovery time
t_rr
I_F= I_R =30mA, I_rr=0.1*I_R , R_L=100Ω
50
ns
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