B5819W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

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Surface Mount Schottky Rectifier
Major Ratings and Characteristics
I_F(AV)
1.0 A
V_RRM
20 V to 100 V
I_FSM
25 A
V_F
T_j max.
0.55 V , 0.70_° V,0.85V
125 C
Features
● _{Low profile package}
● _{Ideal for automated placement}
● _{Ultrafast reverse recovery time}
● _{Low power losses, high efficiency}
● _{Low forward voltage drop}
● High surge capability
● _{High temperature soldering：}
260℃/10 seconds at terminals
● _{Component in accordance to}
RoHS 2002/95/1 and WEEE 2002/96/EC
DSK12~DSK110
Mechanical Date
● _{Case: JEDEC SOD-123FL molded plastic}
body over passivated chip
● _{Terminals: Solder plated, solderable per}
J-STD-002B and JESD22-B102D
● _{Polarity: Laser band denotes cathode end}
Maximu_°m Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 C unless otherwise noted)
Symbol DSK12 DSK13 DSK14 DSK15 DSK16 DSK18 DSK110 UNIT
Maximum repetitive peak reverse voltage
V_RRM 20
Maximum RMS voltage
V_RMS 14
Maximum DC blocking voltage
V_DC 20
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I_F(AV)
I_FSM
Maximum instantaneous forwad voltage at 1.0A V_F
Maximum DC reverse current
at Rated DC blocking voltage
T_A = 25 ℃
T_A = 100℃
I_R
Typical junction capacitance at 4.0 V ,1MHz
Operating junction and storage
temperature range
C_J
T_J, T_STG
30
21
30
0.55
40 50 60
28 35 42
40 50 60
1
25
0.70
1.0
10
110
– 65 to +125
80 100 V
56 70 V
80 100 V
A
A
0.85
V
mA
℃
OLITECH ELECTRONICS CO. LTD.
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