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1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes
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1N4148 HIGH VOLTAGE SILICON RECTIFIER
VOLTAGE RANGE
CURRENT
75 Volts
1.5 A ere
FEATURES
Silicon Epitaxial Planar Diode
Fast switching diode
This diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation
MECHANICAL DATA
Case: DO-35
Weight: apprax: 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f ≥ 50 Hz
VR
75
V
VRM
100
V
I0
1501)
mA
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation at Tamb = 25 °C
IFSM
500
mA
Ptot
5001)
mW
Junction Temperature
Tj
175
°C
Storage Temperature Range
TS
–65 to +175
°C
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
OLITECH ELECTRONICS CO. LTD.
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