MSM56V16800E Datasheet, PDF (1/30 Pages) OKI electronic componets – 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM

E2G1053-18-54
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MSM56V16800E
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2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated
in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank ¥ 1,048,576-word ¥ 8-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
– CAS latency (1, 2, 3)
– Burst length (1, 2, 4, 8, full page)
– Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package:
44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16800E-8
MSM56V16800E-10
Max.
Frequency
125 MHz
100 MHz
Access Time (Max.)
t_AC1
t_AC2
t_AC3
22 ns 10 ns 6 ns
27 ns 9 ns 9 ns
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