MSM56V16160F Datasheet, PDF (1/31 Pages) OKI electronic componets – 2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM

Semiconductor
This version : Sep.1999
MSM56V16160F
2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s
CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL
compatible.
FEATURES
· Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell
· 2-bank ´ 524,288-word ´ 16bit configuration
· 3.3V power supply ± 0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible
· Refresh : 4096 cycles/64 ms
· Programmable data transfer mode
- CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full page)
- Data scramble (sequential , interleave)
· CBR auto-refresh, Self-refresh capability
· Package:
50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160F-xxTS-K)
xx : indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16160F-8
MSM56V16160F-10
Max.
Frequency
125MHz
100MHz
Access Time (Max.)
t_AC2
9ns
t_AC3
6ns
9ns
9ns
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