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MSM548512L Datasheet, PDF (1/12 Pages) OKI electronic componets – 524,288-Word X 8-Bit High-Speed PSRAM
E2L0044-17-Y1
¡ ¡ SemicondSucetormiconductor
MSM548512L
524,288-Word ¥ 8-Bit High-Speed PSRAM
This versioMn:SMJan54. 18959182L
Previous version: Dec. 1996
DESCRIPTION
The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,
coupled with single-transister memory storage cells, permits maximum circuit density, minimum
chip size and high speed.
MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh
mode. In the Self-refresh mode the internal refresh timer and address counter refresh the
dynamic memory cells automatically. This series allows low power consumption when using
standby mode with Self-refresh.
The MSM548512L also features a static RAM-like write function that writes the data into the
memory cell at the rising edge of WE.
FEATURES
• Large capacity
• Fast access time
• Low power
• Refresh free
• Logic compatible
• Single power supply
• Refresh
• Package compatible
• Package options:
32-pin 600 mil plastic DIP
32-pin 525 mil plastic SOP
PRODUCT FAMILY
Family
MSM548512L-80RS
MSM548512L-10RS
MSM548512L-12RS
MSM548512L-80GS-K
MSM548512L-10GS-K
MSM548512L-12GS-K
: 4-Mbit (524,288-word ¥ 8 bits)
: 80 ns max.
: 200 µA max. (standby with Self-refresh)
: Self refresh
: SRAM WE pin, no address multiplex
: 5 V ±10%
: 2048 cycle/32 ms auto-address refresh
: SRAM standard package
(DIP32-P-600-2.54) (Product : MSM548512L-xxRS)
(SOP32-P-525-1.27-K) (Product : MSM548512L-xxGS-K)
xx indicates speed rank.
Access Time (Max.)
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
Package
600 mil 32-pin
Plastic DIP
525 mil 32-pin
Plastic SOP
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