MSM51V4400E Datasheet, PDF (1/14 Pages) OKI electronic componets – 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

FEDD51V4400E-01
Semiconductor
MSM51V4400E
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
This version : Aug. 2000
DESCRIPTION
The MSM51V4400E is a 1,048,576-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The
MSM51V4400E is available in a 26/20-pin plastic SOJ, 26/20-pin plastic TSOP.
FEATURES
• 1,048,576-word × 4-bit configuration
• Single 3.3V power supply, ±0.3V tolerance
• Input
: LVTTL compatible, low input capacitance
• Output : LVTTL compatible, 3-state
• Refresh : 1024 cycles/16 ms
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300mil plastic SOJ (SOJ26/20-P-300-1.27)
(Product : MSM51V4400E-xxSJ)
26/20-pin 300mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM51V4400E-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM51V4400E-70
MSM51V4400E-10
Access Time (Max.)
Cycle Time
Power Dissipation
t_RAC
t_AA
t_CAC t_OEA
(Min.) _{Operating (Max.) Standby (Max.)}
70ns 35ns
100ns 50ns
20ns
25ns
20ns
25ns
130ns
180ns
234mW
198mW
1.8mW
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