MSM514102D Datasheet, PDF (1/18 Pages) OKI electronic componets – 4,194,304-Word X 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE

E2G0149-29-41
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MSM514102D/DL
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4,194,304-Word ¥ 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE
DESCRIPTION
The MSM514102D/DL is a 4,194,304-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate
CMOS technology. The MSM514102D/DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/
single-layer metal CMOS process. The MSM514102D/DL is available in a 26/20-pin plastic SOJ, 20-
pin plastic ZIP, or 26/20-pin plastic TSOP. The MSM514102DL (the low-power version) is specially
designed for lower-power applications.
FEATURES
• 4,194,304-word ¥ 1-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Static Column mode, read modify write capability
• CS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package options:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM514102D/DL-xxSJ)
20-pin 400 mil plastic ZIP
(ZIP20-P-400-1.27)
(Product : MSM514102D/DL-xxZS)
26/20-pin 300 mil plastic TSOP (TSOPII26/20-P-300-1.27-K) (Product : MSM514102D/DL-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM514102D/DL-60
MSM514102D/DL-70
MSM514102D/DL-80
Access Time (Max.)
t_RAC
t_AA
t_CAC
60 ns 30 ns 15 ns
70 ns 35 ns 20 ns
80 ns 40 ns 20 ns
Cycle Time
Power Dissipation
(Min.) _{Operating (Max.) Standby (Max.)}
110 ns
130 ns
150 ns
495 mW
440 mW
385 mW
5.5 mW/
1.1 mW (L-version)
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