MSM512100 Datasheet, PDF (1/16 Pages) OKI electronic componets – 2,097,152-Word X 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

E2G0016-17-41
¡ Semiconductor ^{¡ Semiconductor}
This versi_Mon_S: _MJa₅n₁.₂1₁9₀9₀8_/L
Previous version: May 1997
MSM512100/L
2,097,152-Word ¥ 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
DESCRIPTION
The MSM512100/L is a 2,097,152-word ¥ 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
technology. The MSM512100/L achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer
metal CMOS process. The MSM512100/L is available in a 26/20-pin plastic SOJ. The MSM512100L
(the low-power version) is specially designed for lower-power applications.
FEATURES
• 2,097,152-word ¥ 1-bit configuration
• Single 5 V power supply, ±10% tolerance
• Input : TTL compatible, low input capacitance
• Output : TTL compatible, 3-state
• Refresh : 1024 cycles/16 ms, 1024 cycles/128 ms (L-version)
• Fast page mode, read modify write capability
• CAS before RAS refresh, hidden refresh, RAS-only refresh capability
• Multi-bit test mode capability
• Package:
26/20-pin 300 mil plastic SOJ (SOJ26/20-P-300-1.27) (Product : MSM512100/L-xxSJ)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM512100/L-60
MSM512100/L-70
MSM512100/L-80
Access Time (Max.) Cycle Time
Power Dissipation
t_RAC t_AA t_CAC t_OEA
(Min.)
Operating (Max.) Standby (Max.)
60 ns 30 ns 15 ns 15 ns
70 ns 35 ns 20 ns 20 ns
80 ns 40 ns 20 ns 20 ns
110 ns
130 ns
150 ns
440 mW
385 mW
330 mW
5.5 mW/
0.55 mW (L-version)
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