MMS105H Datasheet, PDF (1/5 Pages) Nanjing Ouzhuo Technology Co., Ltd. – Tunneling Magnetoresistance Bipolar Switch

MMS105H
Tunneling Magnetoresistance Bipolar Switch
General Description
The MMS105H is a Bipolar Digital Switch that integrates TMR and CMOS technology in order to
provide a magnetically triggered switch with high sensitivity, high speed, and low power consumption,
for use in high accuracy applications. This device utilizes a push-pull half-bridge TMR magnetic sensor
and CMOS signal processing circuitry within the same package. The device includes an on-chip
temperature compensated TMR voltage generator for precise magnetic sensing, a comparator, TMR
voltage amplifier, a Schmitt trigger to provide switching hysteresis for noise rejection, and an
open-collector output. An internal band gap regulator is used to provide temperature compensated
supply voltage for the CMOS circuitry, which allows a wide operating VCC range. The MMS105H has
fast response, highly accurate switching points, a wide operating temperature range of -40 °C to 125 °C,
and excellent ESD immunity.
Features and Benefits
• Tunneling Magnetoresistance (TMR) Technology
• Bipolar Latching Operation
• Low Operate Points for High Sensitivity
• Extremely Low Power Consumption
• Compatible with a Wide Range of Supply Voltages
• Excellent Thermal Stability
• High-speed Detection
• High ESD Tolerance
Applications
• Utility Meters Including Water, Gas, and Heat
• Solid State Switching
• Speed Sensing
• Rotary Position Sensing
• Linear Displacement Sensing
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Nanjing Ouzhuo Technology co., Ltd
www.ohhall.com
Tel：86-25-52312738，86-25-83247886 FAX: [phone]
www.zbling.com
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