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PMXB56EN Datasheet, PDF (9/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET
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NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
10
VGS
(V)
8
aaa-009050
VDS
ID
6
4
2
0
0
1
2
3
4
QG (nC)
ID = 3.2 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
4
IS
(A)
3
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
aaa-009052
Tj = 150 °C
2
Tj = 25 °C
1
0
0
0.4
0.8
1.2
VSD (V)
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
Fig. 18. Duty cycle definition
t
006aaa812
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 September 2013
© NXP N.V. 2013. All rights reserved
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