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PBLS2022D Datasheet, PDF (9/16 Pages) NXP Semiconductors – 20 V, 1.8 A PNP BISS loadswitch | |||
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NXP Semiconductors
PBLS2022D
20 V, 1.8 A PNP BISS loadswitch
â1
VCEsat
(V)
â10â1
â10â2
006aab515
(1)
(2)
(3)
â10â3
â10â1
â1
â10
â102
â103
â104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 9.
TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(â¦)
102
006aab517
â1
VCEsat
(V)
â10â1
(1)
006aab516
â10â2
(2)
(3)
â10â3
â10â1
â1
â10
â102
â103
â104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(â¦)
102
006aab518
10
1
10â1
10â2
â10â1
â1
(1)
(2)
(3)
â10
â102
â103
â104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 11. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
10
1
10â1
(1)
(2)
(3)
10â2
â10â1
â1
â10
â102
â103
â104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS2022D_2
Product data sheet
Rev. 02 â 6 September 2009
© NXP B.V. 2009. All rights reserved.
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